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| Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P-N-P transistor Marking CMBT3906 = 2A PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (d.c.) Total power dissipation up to Tamb = 25 C D.C. current gain -IC = 10 mA; -VCE = 1 V Transition frequency at f = 100 MHz -IC = 10 mA; -VCE = 20 V -VCB0 -VCE0 -VEB0 -IC Ptot hFE fT max. max. max. max. max. 40 40 5 200 250 V V V mA mW 100 to 300 min. 250 MHz Continental Device India Limited Data Sheet Page 1 of 3 CMBT3906 RATINGS Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (d.c.) Total power dissipation up to Tamb = 25 C Storage temperature THERMAL CHARACTERISTICS Tj = P(Rth j-t + Rth t-s + Rth s-a) + Tamb Thermal resistance from junction to ambient CHARACTERISTICS Tamb = 25 C unless otherwise specified Collector-emitter breakdown voltage -IC = 1 mA; lB = 0 Collector-base breakdown voltage -IC = 10A; IE = 0 Emitter-base breakdown voltage --IE = 10 A; IC = 0 Collector cut-off current -VCE = 30 V; -VEB = 3 V Base current with reverse biased emitter junction Output capacitance at f = 100 kHz IE = 0; -VCB = 5 V Input capacitance at f = 100 kHz IC = 0; -VBE = 0,5 V Saturation voltages -IC = 10 mA; -IB = 1 mA -IC = 50 mA; -lB = 5 mA -IC = 10 mA; -IB = 1 mA -IC = 50 mA; -lB = 5 mA D.C. current gain -IC = 0,1 mA; -VCE = 1 V -IC = 1 mA; -VCE = 1 V -IC = 10 mA; -VCE = 1 V -VCB0 -VCE0 -VEB0 -IC Ptot Tstg max. max. max. max. 40 40 5 200 V V V mA max. 250 mW -55 to +150 C Rth j-a = 500 K/W -V(BR)CE0 min. -V(BR)CB0 min. -V(BR)EB0 min. -I CEX -IBEX Cc Ce max. max, max, max. 40 V 40 V 5V 50 nA 50 nA 4,5 pF 10 pF -VCEsat -VCEsat -VBEsat -VBEsat hFE hFE hFE max. 0,25 V max. 0,4 V max. 0,85 V min. 0,65 V max. 0,95 V min. min. min. max. 60 80 100 300 Continental Device India Limited Data Sheet Page 2 of 3 CMBT3906 -IC = 50 mA; -VCE = 1 V -IC = 100 mA; -VCE = 1 V Transition frequency at f = 100 MHz -IC = 10mA; -VCE = 20V Noise figure at RS = 1 k -IC = 100A; -VCE = 5 V f = 10 Hz to 15,7 kHz Small Signal Current Gain VCE = 10V; IC = 1 mA; f = 1 KHz hFE hFE fT min. min. min. 60 30 250 MHz F max. 4 dB hfe min. max. 100 400 Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD are believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-2579 6150, 5141 1112 Fax + 91-11-2579 5290, 5141 1119 email@cdil.com www.cdilsemi.com Continental Device India Limited Data Sheet Page 3 of 3 |
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